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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRFDC20 Siliconix

    IRFDC20 [Siliconix]

    IRFDC20
    IRFDC20

    Part No:

    IRFDC20

    Category:

    Transistors

    Manufacturer:

    Siliconix

    Description:

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

    RoHS Status:

    Product FAQ

    1. Is IRFDC20 available for RFQ?

    Yes. IRFDC20 by Siliconix is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRFDC20?

    Pricing for IRFDC20 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRFDC20?

    IRFDC20 is a Siliconix Transistors with Zero Gate Voltage Drain Current 480V 125C: 250µA and Body Diode Reverse Recovery Charge Max: 1.3 µC. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRFDC20?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRFDC20 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRFDC20?

    Yes. If IRFDC20 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Siliconix Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRFDC20

    Manufacturer:

    Siliconix

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Gate Source Voltage
    ±20V
    Continuous Drain Current (100C)
    0.20A
    Continuous Drain Current (25C)
    0.32A
    Drain Source Voltage
    600V
    Pulsed Drain Current
    2.6A
    Input Capacitance
    350pF
    Output Capacitance
    48pF
    Total Gate Charge
    18 nC
    Reverse Transfer Capacitance
    8.6pF
    Operating Temperature
    -55°C ~ +150°C
    Package
    HVMDIP
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Body Diode Reverse Recovery Charge Max
    1.3 µC
    Body Diode Reverse Recovery Charge Min
    0.67 µC
    Body Diode Reverse Recovery Time Max
    580 ns
    Body Diode Reverse Recovery Time Min
    290 ns
    Body Diode Voltage
    1.6V
    Breakdown Voltage
    600V
    Continuous Source Drain Diode Current
    0.32A
    Drain Source On Resistance
    4.4Ω
    Fall Time
    25 ns
    Forward Transconductance Min
    1.4 S
    Gate Drain Charge
    8.9 nC
    Gate Source Charge
    3.0 nC
    Gate Source Leakage Max
    ±100 nA
    Gate Source Threshold Voltage
    2.0V ~ 4.0V
    Internal Drain Inductance
    4.0nH
    Internal Source Inductance
    6.0nH
    Linear Derating Factor
    0.0083W/°C
    Max Power Dissipation
    1.0W
    Peak Diode Recovery Dv Dt
    3.0V/ns
    Pulsed Diode Forward Current
    2.6A
    Repetitive Avalanche Current
    0.32A
    Repetitive Avalanche Energy
    0.10 mJ
    Rise Time
    23 ns
    Single Pulse Avalanche Energy
    50 mJ
    Soldering Peak Temperature
    300°C
    Thermal Resistance Junction Ambient
    120°C/W
    Turn Off Delay Time
    30 ns
    Turn On Delay Time
    10 ns
    Vds Temp Coefficient
    0.88V/°C
    Zero Gate Voltage Drain Current 480V 125C
    250µA
    Zero Gate Voltage Drain Current 600V
    25µA

    Products Detail

    N-Channel Power MOSFET with 600V drain-source voltage and 4.4Ω on-resistance at V_GS=10V. Features include dynamic dV/dt rating, repetitive avalanche rating, fast switching, ease of paralleling, and simple drive requirements. The 4-pin HVMDIP package enables automatic insertion and end stacking for thermal dissipation up to 1W. Compliant to RoHS Directive 2002/95/EC.

    Key Features

    • Dynamic dV/dt Rating, Repetitive Avalanche Rated, For Automatic Insertion, End Stackable, Fast Switching, Ease of Paralleling, Simple Drive Requirements, RoHS Compliant, Single Configuration

    Documents

    Datasheets:

    IRFDC20

    RohsStatement:

    Vishay-company-15.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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