Ampleon

The WM8501 is a high performance stereo DAC with an integrated 1.7Vrms line driver. It is designed for audio applications that require a high voltage output along with enhanced load drive capability.

The WM5102 is a highly-integrated low-power audio system for smartphones, tablets and other portable audio devices. It combines wideband telephony voice processing with a flexible, high-performance audio hub CODEC.

24-bit 192kHz Stereo DAC with 2Vrms Ground Referenced Line Output

The WM1811A is a highly integrated ultra-low power hi-fi CODEC designed for smartphones and other portable devices rich in multimedia features.

Специализированный интерфейсный ИС автомобильный, AEC-Q101 Series TO-220-3

РЧ ПТ ГЭМТ 150 В 11.5 дБ SOT467C

Broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from Ampleon, operating from DC to 3.5 GHz.

LDMOS S-Band radar power transistor, 20W power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.

A 10W LDMOS power transistor for broadcast and industrial applications in the HFto2500MHz band.

A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications, suitable for the frequency range HF to 1500 MHz.

A 10W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400MHz.

35.8dB W-CDMA Лента и катушка (TR) 700MHz~1GHz 28V P1dB:14.8dBm Поверхностный монтаж

250W LDMOS power transistor for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

25W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

L-band radar LDMOS transistor operating in the 1200 to 1400 MHz frequency range.

РЧ MOSFET LDMOS 28 В CDFM6.РЧ MOSFET 28 В 900 мА 2.5 ГГц ~ 2.7 ГГц 17 дБ 25 Вт CDFM6

радиочастотный полевой транзистор LDMOS 65 В 17.3 дБ SOT1244C

160W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000MHz to 2200MHz.

65 В

400W LDMOS power transistor for base station applications at frequencies from 716MHz to 960MHz.

A 650W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

РЧ МОП-транзистор LDMOS 50В SOT467C.РЧ МОП-транзистор 50 В 500 мА 860МГц 21дБ 140Вт SOT467C

РЧ МОП-транзистор LDMOS 40 В SOT467B.РЧ МОП-транзистор 40 В 500 мА 860 МГц 19 дБ 100 Вт SOT-467B

РЧ МОП-транзистор LDMOS 40V SOT467C.РЧ МОП-транзистор 40 V 500 мА 860 МГц 19 дБ 100 Вт SOT467C

65 В SOT-502B

140W LDMOS power transistor for base station applications at frequencies from 2300MHz to 2400MHz.

140W LDMOS power transistor for base station applications at frequencies from 2300MHz to 2400MHz.

250W LDMOS power transistor for base station applications at frequencies from 2110MHz to 2170MHz.

65 В SOT-1121B

250W LDMOS power transistor for base station applications at frequencies from 869MHz to 960MHz.

65 V

RF МОП-транзистор LDMOS 28V CDFM4.RF МОП-транзистор 28 В 450 мА 2.5 ГГц ~ 2.7 ГГц 17.5 дБ 12 Вт CDFM4

RF MOSFET LDMOS 28V LDMOST.RF Mosfet 28 V 450 mA 2.5GHz ~ 2.7GHz 17.5dB 12W LDMOST