CNY17F2SD [Onsemi]

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. They feature high collector-emitter voltage (up to 70V), closely matched current transfer ratio (CTR) to minimize unit-to-unit variation, and very low coupled capacitance for minimum noise susceptibility. Available in black (non-M) and white (M suffix) packages.