EVLMG6 [STMicroelectronics]

The EVLMG6 is a GaN-based half-bridge power module equipped with MASTERGAN6, which quickly creates new topologies without needing a complete PCB design.

The module is shipped with available footprint locations for low side resistors (set to zero) and for two external body diodes (not mounted), connected in parallel to each half-bridge GaN.

The module can be easily configured to operate with many resonant and hard switching topologies.

The VCC supply can be derived directly from the application IC controller. On-board bootstrap diode supplies the high side VBOOT voltage and ensures extremely quick high side section activation. MASTERGAN6 has two internal LDO that quickly generate the optimal 6V supply for the two high side and low side GaN drivers.

The module accepts separate driving signals having an amplitude range between 3 V and 16V independently from VCC level.

The EVLMG6 is a 30 x 42 mm wide FR-4 PCB, resulting in an Rth(J-A) of approximately 40 °C/W, without forced airflow.

• GaN half-bridge daughter board equipped with MASTERGAN6, suitable for power applications requiring fast wake up time.
• Comprehensive set of input control signals (LIN, HIN, SD, and STBY) with wide amplitude range to be connected to either analog controllers or micro-controllers.
• VCC directly connected to controller IC supply. No needed external voltage regulator to provide a proper supply and protections to GaN drivers.
• Discrete bootstrap diode and capacitor for high frequency solutions.
• Adjustable low side shunt to serve peak current mode control algorithms.
• External parallel body diodes to serve resonant application needs.
• 30 x 40 mm FR4 dual layer PCB with 40 °C/W junction to ambient thermal resistance.
• RoHS compliant.