The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free configurable current sense amplifiers are integrated.

The device has a low power mode (standby mode) where the current consumption is less than 5 µA.

Programmable gate driving current allows minimizing EMI. Each gate driver monitors independently its external MOSFET drain-source voltage for fault conditions.

Programmable cross current protection time avoids concurrency of high side and low side activation for each half bridge.

Two off-state diagnostic comparators detect potential short to ground, short to battery or open load conditions.

The integrated standard serial peripheral interface (SPI) controls the device and provides diagnostic information. An additional DIAGN output pin alerts the microcontrollers of a fault occurred into the device faster than the SPI communication.

The L99H92 device implements diagnostic and protection features such as supply voltage monitoring, charge pump voltage monitoring, overcurrent protection, temperature warning and overtemperature shutdown.

The devices are hosted in a TQFP32 and a QFN32 package both with exposed pad. QFN32 has wettable flanks for easy visual inspection of the solder joint.

• AEC-Q100 qualified
• RoHs compliant device
• Power supply operating range from 4.51 V to 28 V (gate drivers operative from 5.41 V)
• 3.3 V/5 V compatible I/Os
• All pins linked to the microcontroller, fail-safe input and VDD are made tolerant to battery exposure
• Dual half-bridge driver compatible with standard level threshold NMOSFETs
• Configurable full-bridge or dual independent half-bridges control
  • Programmable recirculation path in case of full-bridge control
• Dual stage charge pump supporting 100% PWM duty cycle down to 5.41 V battery voltage
  • High and low side minimum V_GS=6.2 V @ VDH=5.5 V and charge pump load current (I_CPLOAD) equal to 5 mA
  • High and low side minimum V_GS=8.2 V @ VDH≥8 V and charge pump load current (I_CPLOAD) equal to 10 mA
• Charge pump output available for driving an external reverse battery NMOSFET protection
• Programmable gate driving current (up to 170 mA) for output voltage slew rate control
• Programmable drain-source monitoring for overcurrent protection and programmable cross-current protection time (dead-time)
• Open load and output short circuit detection in off-state diagnostic mode
• SPI for control and diagnosis (ST SPI 4.1)
• Programmable diagnostic output
• Two independent current sense amplifiers
  • Low offset with extremely low thermal drift
  • Suitable for high-side, in-line and low–side current sensing
  • Independently programmable gain (10x, 20x, 50x, 100x)
  • Analog output centered at V_DD/2 or VDD/22
• Overtemperature prewarning and shutdown
• Analog and digital power supply inputs over/undervoltage protections
• Asynchronous and logic independent fail-safe input to switch off all the MOSFETs
• Low quiescent current
• Support for random HW faults up to ASIL B