SRAM

72M-bit DDR II+ synchronous static RAM with densities of 8Mx9, 4Mx18, and 2Mx36, and read latencies of 2.0 or 2.5 clock cycles.

36M-bit QDR II SRAM with 4-word burst operation.

The μPD44325092B is a 4,194,304-word by 9-bit, the μPD44325182B is a 2,097,152-word by 18-bit and the μPD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

36M-bit QDR II SRAM with 4-word burst operation.

Synchronous quad data rate static RAM with various word and bit configurations.

36M-BIT DDR II SRAM with separate I/O, featuring synchronous double data rate static RAM.

Standard 8K x 8 static RAM with 70 ns access time, low power consumption, and TTL/CMOS-compatible inputs and outputs.

IC 128K X 8 STANDARD SRAM, 85 ns, PDSO32, 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32, Static RAM

The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

4-Mbit high speed static RAM organized 256-kword × 16-bit with high speed access time.

The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

The R1RP0416DI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

The R1LV0816ASA is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. It is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.

The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s high-performance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density, higher performance and low power consumption.

The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262,144-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

Low voltage 2-Mbit static RAM organized as 262,144-word by 8-bit, fabricated by Renesas’s 0.15um CMOS and TFT technologies.

The R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262,144-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

256 kb Low Power Serial SRAM with 32 k x 8 bit organization.

2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit

1Mb Ultra-Low Power Asynchronous CMOS SRAM organized as 64K × 16 bit.

32Mb: 2 Meg x 16 Async/Page CellularRAM 1.0 Memory

The M48Z35AY/V ZEROPOWER® RAM is a 32 Kbit x 8, non-volatile static RAM

3.3V In-System Programmable High Density SuperFAST™ PLD

ispLSI 2032VE is a 3.3V In-System Programmable High Density SuperFAST PLD with 1000 PLD gates, 32 I/O pins, and 32 registers.

In-System Programmable High Density PLD with 1000 PLD Gates, 32 I/O Pins, and 32 Registers.

The ispLSI 1048C is a High-Density Programmable Logic Device containing 288 Registers, 96 Universal I/O pins, 12 Dedicated Input pins, two Global Output Enables (GOE), four Dedicated Clock Input pins and a Global Routing Pool (GRP).

32Mb Serial RAM with 1.8V/3.0V supply, 104MHz clock, and SPI & QPI protocol support.

The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.

High-speed, 8M bit static RAMs organized as 512K words by 16 bits.

8Mb low voltage, ultra low power pseudo CMOS static RAM.

High-speed, 8M bit static RAMs organized as 512K words by 16 bits with ultra low power operation.

High-speed, 8M bit static RAMs organized as 512K words by 16 bits.

8Mb low voltage, ultra low power pseudo CMOS static RAM organized as 512K words by 16 bits.

8Mb low voltage, ultra low power pseudo CMOS static RAM

The ISSI IS66WV25616ALL/BLL is a high-speed, 4M bit static RAM organized as 256K words by 16 bits.

36 Mb synchronous pipelined static RAM with high-speed, low-power design for burstable memory applications.