Ampleon

The WM8501 is a high performance stereo DAC with an integrated 1.7Vrms line driver. It is designed for audio applications that require a high voltage output along with enhanced load drive capability.

The WM5102 is a highly-integrated low-power audio system for smartphones, tablets and other portable audio devices. It combines wideband telephony voice processing with a flexible, high-performance audio hub CODEC.

24-bit 192kHz Stereo DAC with 2Vrms Ground Referenced Line Output

The WM1811A is a highly integrated ultra-low power hi-fi CODEC designed for smartphones and other portable devices rich in multimedia features.

The TDA8026 is a cost-effective, analog interface for addressing multiple smart card slots in a Point Of Sales (POS) terminal. It can address up to two main cards (synchronous or asynchronous smart cards supported) and up to four Security Access Modules (SAMs).

Broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz.

Broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from Ampleon, operating from DC to 3.5 GHz.

LDMOS S-Band radar power transistor, 20W power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.

A 10W LDMOS power transistor for broadcast and industrial applications in the HFto2500MHz band.

A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications, suitable for the frequency range HF to 1500 MHz.

A 10W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400MHz.

200W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425MHz to 450MHz.

The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon's state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz.

The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz.

250W LDMOS power transistor for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

25W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

L-band radar LDMOS transistor operating in the 1200 to 1400 MHz frequency range.

90W LDMOS power transistor for base station applications at frequencies from 3400MHz to 3600MHz.

90W LDMOS power transistor for base station applications at frequencies from 3400MHz to 3600MHz.

100W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500MHz to 2700MHz.

270W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110MHz to 2170MHz.

160W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000MHz to 2200MHz.

400W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805MHz to 1995MHz.

400W LDMOS power transistor for base station applications at frequencies from 716MHz to 960MHz.

A 600W LDMOS RF power transistor for broadcast Doherty transmitter applications.

A 650W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

A 600W LDMOS RF power transistor for broadcast transmitter and industrial applications, with excellent ruggedness for digital and analog transmitters.

A 500W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

A 140W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1GHz.

A 300 W LDMOS RF power transistor for broadcast transmitter and industrial applications, delivering 300 W broadband over the full UHF band from 470 MHz to 860 MHz.

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz.

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz.

UHF power LDMOS transistor in a SOT540A package with ceramic cap.

140W LDMOS power transistor for base station applications at frequencies from 2500MHz to 2700MHz.

140W LDMOS power transistor for base station applications at frequencies from 2300MHz to 2400MHz.

140W LDMOS power transistor for base station applications at frequencies from 2300MHz to 2400MHz.

250W LDMOS power transistor for base station applications at frequencies from 2110MHz to 2170MHz.

200W LDMOS power transistor for base station applications at frequencies from 2110MHz to 2170MHz.

90 W LDMOS power transistor for base station applications at frequencies from 1800MHz to 2000MHz, designed for operation at 1427MHz to1525MHz, 1805MHz to 1880MHz and 2110MHz to 2170MHz.

90 W LDMOS power transistor for base station applications at frequencies from 1800MHz to 2000MHz, designed for operation at 1427MHz to1525MHz, 1805MHz to 1880MHz and 2110MHz to 2170MHz.

250W LDMOS power transistor for base station applications at frequencies from 869MHz to 960MHz.

250W LDMOS power transistor for base station applications at frequencies from 869MHz to 960MHz.

25W LDMOS power transistor for base station applications at frequencies from 3400MHz to 3800MHz. WiMAX power LDMOS transistor.

100 W LDMOS power transistor for base station applications at frequencies from 3400MHz to 3600 MHz. WiMAX power LDMOS transistor.

45W LDMOS power transistor for base station applications at frequencies from 2500MHz to 2700MHz. WiMAX power LDMOS transistor.

45W LDMOS power transistor for base station applications at frequencies from 2500MHz to 2700MHz.

40W LDMOS power transistor for base station applications at frequencies from 2500MHz to 2700MHz, also suitable for operation at 2300MHz to 2400MHz.

40W LDMOS power transistor for base station applications at frequencies from 2500MHz to 2700MHz.

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.