WOLFSPEED

The PXFE211507FC is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band.

Thermally-Enhanced High Power RF LDMOS FETs for 350 W, 50 V, 1200 – 1400 MHz applications.

Thermally-Enhanced High Power RF LDMOS FET, 50 W, 50 V, 1200 – 1400 MHz

Thermally-Enhanced High Power RF LDMOS FET, 700 W, 50 V, 470 – 806 MHz

The PTGA090304MD is a wideband, two-stage, LDMOS integrated power amplifier. Fabricated with 50 V LDMOS process, it incorporates internal matching for operation from 575 MHz to 960 MHz, and dual independent outputs of 15 W each.

An unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz.

An 80-watt LDMOS FET with an asymmetrical design for multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band.

A 70-watt (P3dB) GaN on SiC HEMT for multi-standard cellular power amplifier applications.

Silicon Carbide Schottky Diode E-Series Automotive

4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode

4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode

900V Silicon Carbide Power MOSFET with low on-resistance for automotive applications.

Silicon Carbide Power MOSFET with 900V blocking voltage and low on-resistance.

Silicon Carbide Power MOSFET, E-Series Automotive, N-Channel Enhancement Mode

Silicon Carbide Power MOSFET, E-Series Automotive, N-Channel Enhancement Mode

650-Volt Silicon Carbide Schottky Diode for automotive applications.

650V Silicon Carbide Schottky Diode from the E-Series Automotive family

650 V, 8 A Silicon Carbide Schottky Diode

600V, 6A Silicon Carbide Schottky Diode with Zero Recovery technology.

600 V, 1 A, Silicon Carbide Schottky Diode

Cree's CMPA2735030S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) power amplifier operating from 2.7 to 3.5 GHz with 30 W output power.

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

GaN HEMT transistor with high efficiency, high gain, and wide bandwidth for DC - 1.6 GHz L-Band radar applications.

The CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Operating from a 28 volt rail, it offers a general purpose, broadband solution to a variety of RF and microwave applications.

Wolfspeed's CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth capabilities, ideal for 2.3-2.7GHz WiMAX, LTE, and BWA amplifier applications.

Wolfspeed's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications.

GaN HEMT with 15 W output power at 8.0 GHz, offering high power density and wide bandwidth.

1200 V, 20 A All-Silicon Carbide Six-Pack (Three Phase) Module

6th Generation 650 V, 20 A Silicon Carbide Schottky Diode. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

650 V Silicon Carbide Schottky Diode with 16 A at 157°C, featuring zero reverse recovery and low forward voltage.

650 V, 10 A, Silicon Carbide Schottky Diode

6th Generation 650 V, 8 A Silicon Carbide Schottky Diode. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

6th Generation 650 V, 8 A Silicon Carbide Schottky Diode. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

6th Generation 650 V, 6 A Silicon Carbide Schottky Diode with performance advantages for higher efficiency, frequencies, and power densities.

6th Generation 650 V, 6 A Silicon Carbide Schottky Diode with high efficiency, high frequency, and high power density capabilities.

650 V, 6 A, Silicon Carbide Schottky Diode in TO-252-2 package.

6th Generation 650 V, 4 A Silicon Carbide Schottky Diode. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

4th Generation 1200 V, 30 A Silicon Carbide Schottky Diode. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode with performance advantages of SiC Schottky Barrier diode for higher efficiency, frequencies, and power densities.

4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

1.2kV Silicon Carbide Schottky Diode with zero reverse recovery current

C4D10120E is a 1200V Silicon Carbide Schottky Diode with zero reverse recovery current.

1200 V Silicon Carbide Schottky Diode with 18 A at 135°C and zero reverse recovery current.

4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

1200 V, 8 A Silicon Carbide Schottky Diode in TO-252-2 package

1200 V, 8 A Silicon Carbide Schottky Diode in TO-252-2 package

1200V Silicon Carbide Schottky Diode with 9.5A at 135°C, featuring zero reverse recovery current and fast switching.