MAX2602EVKIT+ [Analog Devices]

The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor and a biasing diode that matches the thermal and process characteristics of the power transistor. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply. They can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, and no drain switch is required, increasing operating time. The devices are available in thermally enhanced, 8-pin SO packages screened to the extended temperature range (-40°C to +85°C).