Part No:
BCV46TC
Category:
Transistors
Description:
PNP - Darlington -55°C~150°C TJ 100nA ICBO 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Package:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
Collector-Emitter Breakdown Voltage
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Continuous Collector Current
Products Detail
BCV46TC Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.When VCE saturation is 1V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 200MHz.A maximum collector current of 500mA volts can be achieved.
BCV46TC Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV46TC Applications
There are a lot of Diodes Incorporated
BCV46TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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