Part No:
BCV48TA
Category:
Transistors
Description:
PNP - Darlington -65°C~150°C TJ 100nA ICBO 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
Package:
-
Datasheet:
-
Production Status:
In Stock Status:
Specification
Transistor Element Material
Collector-Emitter Breakdown Voltage
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Continuous Collector Current
Products Detail
BCV48TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100μA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.The emitter base voltage can be kept at 10V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCV48TA Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV48TA Applications
There are a lot of Diodes Incorporated
BCV48TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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