The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300μs pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This transistor is ideal for use in L-band pulsed primary radar output stages. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.