The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The transistor provides over 14.5 dB gain, 300 Watts of pulsed RF output power at 100uS pulse width, 11% duty cycle across the 2700 MHz to 2900 MHz band. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses all gold transistor metallization to provide highest reliability and superior ruggedness.