Can you suggest alternatives to APTDC30H1201G?

Yes. If APTDC30H1201G is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI PIN Diodes parts or compatible alternatives.

APTDC30H1201G - MICROSEMI | Electronic Components

Name: APTDC30H1201G
Brand: MICROSEMI
SKU: APTDC30H1201G
Availability: InStock

Product FAQ

1. Is APTDC30H1201G available for RFQ?

Yes. APTDC30H1201G by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for APTDC30H1201G?

Pricing for APTDC30H1201G can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of APTDC30H1201G?

APTDC30H1201G is a MICROSEMI PIN Diodes with Operating Case Temperature: -40°C ~ 100°C and Operating Temperature: -40°C ~ 175°C. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for APTDC30H1201G?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can APTDC30H1201G be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

Part No:

APTDC30H1201G

PIN Diodes

Manufacturer:

MICROSEMI

Description:

SiC Diode Full Bridge with 1200V V_RRM and 30A I_F @ Tc=80°C

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

V F

1.8V

Operating Temperature

-40°C ~ 175°C

Package

SP1

RoHS Status

RoHS Compliant

RoHS Status

RoHS Compliant

Weight

80 g

Storage Temperature

-40°C ~ 125°C

I F Max

30A

I FSM Max

370A

I RM Max

600µA

Mounting Torque

2.5 N.m ~ 4.7 N.m

Operating Case Temperature

Products Detail

SiC Schottky Diode Full Bridge Power Module with zero reverse recovery, zero forward recovery, temperature independent switching, low stray inductance, high integration. Benefits include outstanding high-frequency performance, low losses, low noise switching, solderable terminals, direct mounting to heatsink with low thermal resistance, and RoHS compliance.