APTM10DAM02G Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 40000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 495A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 500 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 160 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

APTM10DAM02G Features

the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 495A
the turn-off delay time is 500 ns
a 100V drain to source voltage (Vdss)

APTM10DAM02G Applications

There are a lot of Microsemi Corporation
APTM10DAM02G applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,