Product Description:

The N25Q128A13EF8A0F is a high-performance NOR-type flash memory IC from Micron Technology, designed for use in a variety of applications. This CMOS-based memory device features a memory density of 134,217,728 bits and operates at a nominal supply voltage of 3V. With a standby current of 0.0001A and a supply current of 0.02mA, this device is optimized for low power consumption.

Features:

• NOR-type flash memory with a memory density of 134,217,728 bits
• CMOS technology for low power consumption
• Operating voltage range of 2.7V to 3.6V
• Synchronous serial interface (SPI) for data transfer
• Hardwired and software write protection
• Endurance of 100,000 write/erase cycles
• Temperature range of -40°C to 125°C

Applications:

• Primary applications: Embedded systems, consumer electronics, and industrial control systems
• Secondary applications: Automotive, medical, and aerospace applications

Alternative Parts:

• N25Q128A13EF8A0F is an obsolete part, and alternative parts may be available. Please contact Micron Technology or a authorized distributor for more information.

Embedded Modules:

• This component is not typically used as an embedded module, but rather as a standalone memory device.

FAQs:

Q: What is the maximum supply voltage for this device? A: The maximum supply voltage is 3.6V.

Q: What is the minimum supply voltage for this device? A: The minimum supply voltage is 2.7V.

Q: What is the operating temperature range for this device? A: The operating temperature range is -40°C to 125°C.

Q: What is the endurance of this device? A: The endurance is 100,000 write/erase cycles.

Q: Is this device RoHS compliant? A: Yes, this device is RoHS compliant.

Q: What is the package style of this device? A: The package style is a small outline, heat sink/slug, very thin profile (HVSON).

Q: What is the terminal form of this device? A: The terminal form is no lead.

I hope this product description meets your requirements. Please let me know if you need any further assistance.