PC28F00AG18FF TR [Micron]

The device provides high-performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology. It features multiple-partition architecture enabling background programming or erasing while code execution or data reads occur in another partition. Available in densities from 128Mb to 1Gb, with synchronous burst reads up to 133 MHz. Designed for low-voltage applications, it supports READ operations with VCC at 1.8V, and ERASE and PROGRAM operations with VPP at 1.8V or 9.0V. Includes power-savings features, one-time programmable (OTP) area, and individual block lock for security.