2N4125BU [Onsemi]

2N4125BU Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 2mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is -50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (30V maximal voltage).Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

2N4125BU Features

the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -50mA
the supplier device package of TO-92-3

2N4125BU Applications

There are a lot of ON Semiconductor
2N4125BU applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting