2SB1201T-E [Onsemi]

2SB1201T-E Overview

This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.A maximum collector current of 2A volts is possible.

2SB1201T-E Features

the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at -6V

2SB1201T-E Applications

There are a lot of ON Semiconductor
2SB1201T-E applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting