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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. BD676AS Onsemi

    BD676AS [Onsemi]

    BD676AS
    BD676AS

    Part No:

    BD676AS

    Category:

    Transistors

    Manufacturer:

    Onsemi

    Description:

    PNP - Darlington 150°C TJ 500?A 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

    RoHS Status:

    Product FAQ

    1. Is BD676AS available for RFQ?

    Yes. BD676AS by Onsemi is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for BD676AS?

    Pricing for BD676AS can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of BD676AS?

    BD676AS is a Onsemi Transistors with Packaging: Bulk and DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A 3V and Collector Emitter Saturation Voltage: 2.8V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for BD676AS?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can BD676AS be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to BD676AS?

    Yes. If BD676AS is unavailable, obsolete, or does not meet your required lead time, we can help check similar Onsemi Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    BD676AS

    Manufacturer:

    Onsemi

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 days ago)
    Factory Lead Time
    6 Weeks
    Contact Plating
    Tin
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-225AA, TO-126-3
    Number of Pins
    3
    Weight
    761mg
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Bulk
    Published
    2002
    JESD-609 Code
    e3
    Pbfree Code
    yes
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Voltage - Rated DC
    -45V
    Max Power Dissipation
    14W
    Current Rating
    -4A
    Base Part Number
    BD676
    Number of Elements
    1
    Polarity
    PNP
    Element Configuration
    Single
    Power Dissipation
    14W
    Transistor Application
    SWITCHING
    Transistor Type
    PNP - Darlington
    Collector Emitter Voltage (VCEO)
    45V
    Max Collector Current
    4A
    DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 2A 3V
    Vce Saturation (Max) @ Ib, Ic
    2.8V @ 40mA, 2A
    Collector Emitter Breakdown Voltage
    45V
    Collector Emitter Saturation Voltage
    2.8V
    Collector Base Voltage (VCBO)
    -45V
    Emitter Base Voltage (VEBO)
    -5V
    hFE Min
    750
    Continuous Collector Current
    -4A
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    BD676AS Overview


    The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 750 @ 2A 3V.With a collector emitter saturation voltage of 2.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 40mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.Collector current can be as low as 4A volts at its maximum.

    BD676AS Features


    the DC current gain for this device is 750 @ 2A 3V
    a collector emitter saturation voltage of 2.8V
    the vce saturation(Max) is 2.8V @ 40mA, 2A
    the emitter base voltage is kept at -5V
    the current rating of this device is -4A


    BD676AS Applications


    There are a lot of ON Semiconductor
    BD676AS applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    PCN Design/Specification:

    Logo 17/Aug/2017

    PCN Packaging:

    Mult Devices 24/Oct/2017

    Datasheets:

    BD676AS-ON-Semiconductor-datasheet-529508.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method
    BD676AS-ON-Semiconductor-datasheet-70416.pdf

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