2SD1664T100P [ROHM]

2SD1664T100P Overview

This device has a DC current gain of 82 @ 100mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 1A volts is possible.

2SD1664T100P Features

the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz

2SD1664T100P Applications

There are a lot of ROHM Semiconductor
2SD1664T100P applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting