QSL12TR [ROHM]

QSL12TR Overview

In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.320MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

QSL12TR Features

the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz

QSL12TR Applications

There are a lot of ROHM Semiconductor
QSL12TR applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting