STA475A [SANKEN]

Name: STA475A
Brand: SANKEN
SKU: STA475A
Availability: InStock

Part No:

STA475A

Transistors

Manufacturer:

SANKEN

Description:

STA475A is an NPN Darlington transistor with built-in avalanche diode and resistors.

Datasheet:

Product FAQ

1. Is STA475A available for RFQ?

Yes. STA475A by SANKEN is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for STA475A?

Pricing for STA475A can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of STA475A?

STA475A is a SANKEN Transistors with Collector Emitter Saturation Voltage: 1.5V and Base Emitter Saturation Voltage Max: 2.2V. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for STA475A?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can STA475A be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to STA475A?

Yes. If STA475A is unavailable, obsolete, or does not meet your required lead time, we can help check similar SANKEN Transistors parts or compatible alternatives.

RFQ

Part Number:

STA475A

Manufacturer:

SANKEN

Looking for Pricing? Contact us for volume pricing.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

The STA475A is a high-voltage NPN Darlington transistor featuring a built-in avalanche diode and built-in base resistors (R1=4kΩ, R2=150Ω). It is designed for high current switching applications. Key characteristics include high DC current gain (2000-12000), low collector-emitter saturation voltage (1.5 V max at IC=1A), and fast switching times (ton=0.6µs, tstg=3.0µs, tf=1.0µs). The device supports up to 2A continuous collector current and 4A pulse current.