2STBN15D100 [STMicroelectronics]

2STBN15D100 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.3V @ 4mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 12A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 12A volts can be achieved.

2STBN15D100 Features

the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V

2STBN15D100 Applications

There are a lot of STMicroelectronics
2STBN15D100 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting