2STBN15D100T4 [STMicroelectronics]

2STBN15D100T4 Overview

In this device, the DC current gain is 750 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 4mA, 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.

2STBN15D100T4 Features

the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V

2STBN15D100T4 Applications

There are a lot of STMicroelectronics
2STBN15D100T4 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting