BUL3N7 [STMicroelectronics]

Name: BUL3N7
Brand: STMicroelectronics
SKU: BUL3N7
Availability: InStock

Part No:

BUL3N7

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

NPN 150°C TJ 100?A 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

60W

Base Part Number

BUL3N7

Pin Count

3

Number of Elements

1

Element Configuration

Single

Power - Max

60W

Transistor Application

SWITCHING

Polarity/Channel Type

NPN

Transistor Type

NPN

Collector Emitter Voltage (VCEO)

400V

Max Collector Current

3A

DC Current Gain (hFE) (Min) @ Ic, Vce

18 @ 700mA 5V

JEDEC-95 Code

TO-220AB

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 1A

Collector Emitter Breakdown Voltage

400V

Collector Base Voltage (VCBO)

700V

Emitter Base Voltage (VEBO)

10V

hFE Min

10

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

BUL3N7 Overview

DC current gain in this device equals 18 @ 700mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 1A.An emitter's base voltage can be kept at 10V to gain high efficiency.In extreme cases, the collector current can be as low as 3A volts.

BUL3N7 Features

the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 10V

BUL3N7 Applications

There are a lot of STMicroelectronics
BUL3N7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Documents

Datasheets:

BUL3N7

Product FAQ

1. Is BUL3N7 available for RFQ?

Yes. BUL3N7 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for BUL3N7?

Pricing for BUL3N7 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of BUL3N7?

BUL3N7 is a STMicroelectronics Transistors with Packaging: Tube and DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA 5V and Collector Emitter Breakdown Voltage: 400V. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for BUL3N7?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can BUL3N7 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to BUL3N7?

Yes. If BUL3N7 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

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