M24512E-FDW6T1 [STMicroelectronics]

The M24512E-F is a 512-Kbit I²C-compatible EEPROM (electrically erasable programmable memory) organized as 64 K x 8 bits. It can operate with a supply voltage from 1.6 V to 5.5 V with a clock frequency up to 1 MHz, over an ambient temperature range of -40 °C / +85 °C.

The device offers three 8-bit registers, namely: the device type identifier (DTI) register, the configurable device address (CDA) register, and the software write protection (SWP) register.

The device offers an additional 128-byte page, called the identification page. This page can be used to store sensitive application parameters which can be (later) permanently locked in read-only mode.

The M24512E-F is available in the standard 8-pin TSSOP8, SO8N, UFDFPN8, and unsawn wafer.

On demand, the EEPROM can be delivered with a preprogrammed and locked device address.

• I²C interface
  • Compatible with the following I²C bus modes:
    • 1 MHz (Fast-mode Plus)
    • 400 kHz (Fast-mode)
    • 100 kHz (Standard-mode)
• Memory
  • 512-Kbit (64-Kbyte) of EEPROM
  • Page size: 128-byte
  • Additional 128-byte identification page
• Supply voltage
  • Wide voltage range: 1.6 V to 5.5 V
• Temperature
  • Operating temperature range: -40 °C to +85 °C
• Fast write cycle time
  • Byte and page write within 4 ms (typically 3.1 ms)
• Performance
  • Enhanced ESD/latch-up protection
  • More than 4 million write cycles
  • More than 200-year data retention
  • Fast wake-up time (less than 5 μs)
• Ultralow power current consumption
  • 330 nA (typical) in Standby mode
  • 100 μA (typical) for read current
  • 360 μA (typical) for write current
• Advanced features
  • Configurable device address register
  • Device type identifier register (in read-only)
  • Preprogrammed device address
  • Software write protection register
  • Hardware write protection of the whole memory array
  • Random and sequential read modes
• Package
  • SO8N, TSSOP8, and UFDFPN8 (ECOPACK2)
  • Unsawn wafer (each die is tested)