
K4RAH165VB-BIWM
SAMSUNG

SD2900 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in 28V DC large signal applications up to 500 MHz. The special low thermal resistance packaging makes SD2900 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics SD2900 has the excellent thermal stability.
Common source configuration
Excellent thermal stability
28 VOLTS
2 - 500 MHz
Gold metalization
ISM applications
DC large signal applications
No key features available
No application scenarios available
No documents available
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