STB170NF04 Overview

A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 5mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 26 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

STB170NF04 Features

a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 5mOhm
a 40V drain to source voltage (Vdss)

STB170NF04 Applications

There are a lot of STMicroelectronics
STB170NF04 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples