STB200NF04T4 [STMicroelectronics]

Name: STB200NF04T4
Brand: STMicroelectronics
SKU: STB200NF04T4

Part No:

STB200NF04T4

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3.7m ? @ 90A, 10V ±20V 5100pF @ 25V 210nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Cut Tape (CT)

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

3.7MOhm

Terminal Finish

Matte Tin (Sn) - annealed

Voltage - Rated DC

40V

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Current Rating

120A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STB200N

Pin Count

3

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Power Dissipation-Max

310W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

310W

Turn On Delay Time

30 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

Current - Continuous Drain (Id) @ 25°C

120A Tc

Gate Charge (Qg) (Max) @ Vgs

210nC @ 10V

Rise Time

320ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

120 ns

Turn-Off Delay Time

140 ns

Continuous Drain Current (ID)

120A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

40V

Pulsed Drain Current-Max (IDM)

480A

Height

4.6mm

Length

10.4mm

Width

9.35mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB200NF04T4 Description

This STB200NF04T4 MOSFET is the most recent evolution of STMicroelectronics' "Single Feature SizeTM" stripbased technology. The resulting transistor has a high packing density for low on-resistance, tough avalanche properties, and fewer key alignment stages, resulting in exceptional manufacturing reproducibility.