STD120N4F6 [STMicroelectronics]

Name: STD120N4F6
Brand: STMicroelectronics
SKU: STD120N4F6

Part No:

STD120N4F6

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4m ? @ 40A, 10V ±20V 3850pF @ 25V 65nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

4MOhm

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Base Part Number

STD12

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

110W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

110W

Case Connection

DRAIN

Turn On Delay Time

20 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

3850pF @ 25V

Current - Continuous Drain (Id) @ 25°C

80A Tc

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Rise Time

70ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

20 ns

Turn-Off Delay Time

40 ns

Continuous Drain Current (ID)

80A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

40V

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD120N4F6 Description

STD120N4F6 is a 40V N-channel STripFET F6 Power MOSFET. The STD120N4F6 is developed using the 6th generation of STripFET? DeepGATE? technology, with a new gate structure. The Operating and Storage Temperature Range is between -55 and 175?. And the MOSFET STD120N4F6 is in the TO-252-3 package with 110W power dissipation. The STMicroelectronics STD120N4F6 can be used in switching applications due to the following features.

STD120N4F6 Features

Designed for automotive applications and AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss

STD120N4F6 Applications

Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx120N4F6

RFQ

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Shipping & Warranty

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IMPORTANT NOTICE

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