Part No:
STD1NK60-1
Category:
Transistors
Description:
N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package
Package:
-
Production Status:
In Stock Status:
Specification
Avalanche Energy Rating (Eas)
Configuration
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max
FET Technology
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level
Operating Temperature-Max
Peak Reflow Temperature (Cel)
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Time@Peak Reflow Temperature-Max (s)
Transistor Element Material
Products Detail
STD1NK60-1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 25 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 156pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 1A.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 4A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).
STD1NK60-1 Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V
STD1NK60-1 Applications
There are a lot of STMicroelectronics
STD1NK60-1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
Key Features
No key features available
Application scenarios
No application scenarios available
Documents