STD6NM60N [STMicroelectronics]

STD6NM60N Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 65 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 420pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 40 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STD6NM60N Features

the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns

STD6NM60N Applications

There are a lot of STMicroelectronics
STD6NM60N applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools