STD80N10F7 Description

The STD80N10F7 device utilizes the 7^th generation of design rules of ST's proprietary STripFET? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R_DS(on) in all packages.

STD80N10F7 Features

• Extremely low gate charge

• Ultra low on-resistance

• Low gate input resistance

• ROHS3 Compliant

• Lead Free

STD80N10F7 Applications

• Switching applications

• New Energy Vehicle

• Photovoltaic Generation

• Wind Power Generation

• Smart Grid