Name: STD85N3LH5
Brand: STMicroelectronics
SKU: STD85N3LH5

STD85N3LH5 [STMicroelectronics]

Part No:

STD85N3LH5

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5m ? @ 40A, 10V ±22V 1850pF @ 25V 14nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

175°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

5mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Additional Feature

ULTRA-LOW RESISTANCE

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STD85

Pin Count

3

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Power Dissipation-Max

70W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

70W

Case Connection

DRAIN

Turn On Delay Time

6 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 25V

Current - Continuous Drain (Id) @ 25°C

80A Tc

Gate Charge (Qg) (Max) @ Vgs

14nC @ 5V

Rise Time

14ns

Drive Voltage (Max Rds On,Min Rds On)

5V 10V

Vgs (Max)

±22V

Fall Time (Typ)

10.8 ns

Turn-Off Delay Time

23.6 ns

Continuous Drain Current (ID)

40A

Threshold Voltage

2.5V

Gate to Source Voltage (Vgs)

22V

Drain Current-Max (Abs) (ID)

80A

Drain to Source Breakdown Voltage

30V

Height

2.4mm

Length

6.6mm

Width

6.2mm

REACH SVHC

No SVHC

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD85N3LH5 Description

STD85N3LH5 is a type of N-channel STripFET?V power MOSFET provided by STMicroelectronics based on its fifth generation of STripFET?V technology. Low on-state resistance, low gate drive power losses and high avalanche ruggedness can be ensured when operating. STD85N3LH5 is also able to provide one of the best-in-class figures of merit (FOM).