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MT60B4G4HB-48B:A
Micron
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This STripFETTMV Power MOSFET technology is one of the most recent advancements, and it has been specifically tuned to achieve extremely low on-state resistance while simultaneously giving one of the best-in-class FOMs (figure of merit).In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Industry benchmark RDS(on) * Qg
RDS on-resistance is really low (on)
Avalanche toughness is high.
Gate drive power losses are low.
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