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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. STB18NM80 STMicroelectronics

    STB18NM80 [STMicroelectronics]

    STB18NM80
    STB18NM80

    Part No:

    STB18NM80

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 295m ? @ 8.5A, 10V ±25V 2070pF @ 50V 70nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

    RoHS Status:

    Product FAQ

    1. Is STB18NM80 available for RFQ?

    Yes. STB18NM80 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STB18NM80?

    Pricing for STB18NM80 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STB18NM80?

    STB18NM80 is a STMicroelectronics Transistors with Packaging: Cut Tape (CT) and Current - Continuous Drain (Id) @ 25°C: 17A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STB18NM80?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STB18NM80 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STB18NM80?

    Yes. If STB18NM80 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STB18NM80

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Factory Lead Time
    26 Weeks
    Mount
    Surface Mount
    Mounting Type
    Surface Mount
    Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Cut Tape (CT)
    JESD-609 Code
    e3
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    ECCN Code
    EAR99
    Resistance
    295mOhm
    Terminal Finish
    Matte Tin (Sn) - annealed
    Technology
    MOSFET (Metal Oxide)
    Terminal Form
    GULL WING
    Peak Reflow Temperature (Cel)
    245
    Time@Peak Reflow Temperature-Max (s)
    30
    Base Part Number
    STB18N
    Pin Count
    4
    JESD-30 Code
    R-PSSO-G2
    Number of Elements
    1
    Power Dissipation-Max
    190W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    190W
    Turn On Delay Time
    18 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    2070pF @ 50V
    Current - Continuous Drain (Id) @ 25°C
    17A Tc
    Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
    Rise Time
    28ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±25V
    Fall Time (Typ)
    50 ns
    Turn-Off Delay Time
    96 ns
    Continuous Drain Current (ID)
    17A
    Threshold Voltage
    4V
    Gate to Source Voltage (Vgs)
    30V
    Drain to Source Breakdown Voltage
    800V
    Pulsed Drain Current-Max (IDM)
    68A
    Avalanche Energy Rating (Eas)
    600 mJ
    Height
    4.6mm
    Length
    10.75mm
    Width
    10.4mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STB18NM80 Description


    STMicroelectronics' unique MDmeshTM technology, which associates the multiple drain process with the company's PowerMESHTM horizontal layout, was used to manufacture these N-channel Power MOSFETs. These devices have a very low on-resistance, a very high dv/dt, and good avalanche properties. These Power MOSFETs have an overall dynamic performance that is superior to similar items on the market because to ST's proprietary strip process.



    STB18NM80 Features


    • Avalanche-proofed to the nth degree

    • Low gate charge and input capacitance

    • Input gate resistance is low.



    STB18NM80 Applications


    Switching applications


    Documents

    Datasheets:

    STx18NM80STB18NM80-STMicroelectronics-datasheet-12524639.pdfSTB18NM80-STMicroelectronics-datasheet-10837974.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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