STI34N65M5 [STMicroelectronics]

STI34N65M5 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 510 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2700pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Peak drain current is 112A, which is the maximum pulsed drain current.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STI34N65M5 Features

the avalanche energy rating (Eas) is 510 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 650V voltage
based on its rated peak drain current 112A.

STI34N65M5 Applications

There are a lot of STMicroelectronics
STI34N65M5 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies