STE48NM60 [STMicroelectronics]

STE48NM60 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 850 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 48A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 192A.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STE48NM60 Features

the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 48A
based on its rated peak drain current 192A.
a 650V drain to source voltage (Vdss)

STE48NM60 Applications

There are a lot of STMicroelectronics
STE48NM60 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools