Name: STF6N80K5
Brand: STMicroelectronics
SKU: STF6N80K5

STF6N80K5 [STMicroelectronics]

Part No:

STF6N80K5

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.6 ? @ 2A, 10V 270pF @ 100V 13nC @ 10V 800V TO-220-3 Full Pack

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

17 Weeks

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Weight

329.988449mg

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STF6N

Number of Channels

1

Power Dissipation-Max

25W Tc

Element Configuration

Single

Turn On Delay Time

16 ns

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 100V

Current - Continuous Drain (Id) @ 25°C

4.5A Tc

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Rise Time

7.5ns

Drain to Source Voltage (Vdss)

800V

Drive Voltage (Max Rds On,Min Rds On)

10V

Fall Time (Typ)

16 ns

Turn-Off Delay Time

28.5 ns

Continuous Drain Current (ID)

4.5A

Gate to Source Voltage (Vgs)

30V

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STF6N80K5 Description

Utilizing MDmeshTM K5 technology, STF6N80K5 high voltage N-channel Power MOSFETs are created using a novel, patented vertical structure. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.