STI20N65M5 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 270 mJ.The maximum input capacitance of this device is 1434pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 18A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.There is no pulsed drain current maximum for this device based on its rated peak drain current 72A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

STI20N65M5 Features

the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 650V voltage
based on its rated peak drain current 72A.

STI20N65M5 Applications

There are a lot of STMicroelectronics
STI20N65M5 applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,