Name: STF8NK100Z
Brand: STMicroelectronics
SKU: STF8NK100Z

STF8NK100Z [STMicroelectronics]

Part No:

STF8NK100Z

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.85 ? @ 3.15A, 10V ±30V 2180pF @ 25V 102nC @ 10V 1000V TO-220-3 Full Pack

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

12 Weeks

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

1.85Ohm

Voltage - Rated DC

1kV

Technology

MOSFET (Metal Oxide)

Current Rating

6.5A

Base Part Number

STF8N

Pin Count

3

Number of Elements

1

Power Dissipation-Max

40W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

40W

Turn On Delay Time

28 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

2180pF @ 25V

Current - Continuous Drain (Id) @ 25°C

6.5A Tc

Gate Charge (Qg) (Max) @ Vgs

102nC @ 10V

Rise Time

19ns

Drain to Source Voltage (Vdss)

1000V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

30 ns

Turn-Off Delay Time

59 ns

Continuous Drain Current (ID)

6.5A

Threshold Voltage

3.75V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

1kV

Height

16.4mm

Length

10.4mm

Width

4.6mm

REACH SVHC

No SVHC

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STF8NK100Z Description

The well-known strip-based Power MESHTM layout of ST is greatly optimized to produce the Super MESHTM series. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. Such a series completes ST's line of high voltage MOSFETs, which includes the ground-breaking MD meshTM devices.