STI76NF75 [STMicroelectronics]

STI76NF75 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 3700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 75V.The drain-to-source voltage (Vdss) of this transistor needs to be at 75V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

STI76NF75 Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 80A
a 75V drain to source voltage (Vdss)

STI76NF75 Applications

There are a lot of STMicroelectronics
STI76NF75 applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,