STL16N1VH5 [STMicroelectronics]

STL16N1VH5 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2085pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 64A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

STL16N1VH5 Features

the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 64A.

STL16N1VH5 Applications

There are a lot of STMicroelectronics
STL16N1VH5 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies