STN851-A [STMicroelectronics]

STN851-A Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 2A 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 5A volts can be achieved.

STN851-A Features

the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz

STN851-A Applications

There are a lot of STMicroelectronics
STN851-A applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting