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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. STP360N4F6 STMicroelectronics

    STP360N4F6 [STMicroelectronics]

    STP360N4F6
    STP360N4F6

    Part No:

    STP360N4F6

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 1.8m ? @ 60A, 10V ±20V 17930pF @ 25V 340nC @ 10V TO-220-3

    RoHS Status:

    Product FAQ

    1. Is STP360N4F6 available for RFQ?

    Yes. STP360N4F6 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STP360N4F6?

    Pricing for STP360N4F6 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STP360N4F6?

    STP360N4F6 is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 120A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STP360N4F6?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STP360N4F6 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STP360N4F6?

    Yes. If STP360N4F6 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STP360N4F6

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-220-3
    Number of Pins
    3
    Operating Temperature
    -55°C~175°C TJ
    Packaging
    Tube
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    ECCN Code
    EAR99
    Resistance
    1.8mOhm
    Technology
    MOSFET (Metal Oxide)
    Base Part Number
    STP360
    Number of Channels
    1
    Power Dissipation-Max
    300W Tc
    Element Configuration
    Single
    Power Dissipation
    300W
    FET Type
    N-Channel
    Input Capacitance (Ciss) (Max) @ Vds
    17930pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    120A Tc
    Gate Charge (Qg) (Max) @ Vgs
    340nC @ 10V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±20V
    Continuous Drain Current (ID)
    120A
    Gate to Source Voltage (Vgs)
    20V
    Drain to Source Breakdown Voltage
    40V
    Height
    15.75mm
    Length
    10.4mm
    Width
    4.6mm
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STP360N4F6 Overview


    As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 17930pF @ 25V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

    STP360N4F6 Features


    a continuous drain current (ID) of 120A
    a drain-to-source breakdown voltage of 40V voltage


    STP360N4F6 Applications


    There are a lot of STMicroelectronics
    STP360N4F6 applications of single MOSFETs transistors.


    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
    • Industrial Power Supplies
    • PFC stages, hard switching PWM stages and resonant switching
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method
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