STP3N150

Name: STP3N150
Brand: STMicroelectronics
SKU: STP3N150

Product FAQ

1. Is STP3N150 available for RFQ?

Yes. STP3N150 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for STP3N150?

Pricing for STP3N150 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of STP3N150?

STP3N150 is a STMicroelectronics Transistors with Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED and Drain-source On Resistance-Max: 9 Ω. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for STP3N150?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can STP3N150 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to STP3N150?

Part No:

Transistors

Manufacturer:

STMicroelectronics

Description:

N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-220 package

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

RoHS Status

RoHS Compliant

Part Life Cycle Code

Active

Part Package Code

TO-220AB

Package Description

ROHS COMPLIANT, TO-220, 3 PIN

Pin Count

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

13 Weeks

Avalanche Energy Rating (Eas)

450 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

1500 V

Products Detail

STP3N150 Description

These Power MOSFETs were made using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. As a result, the product meets or exceeds the performance of equivalent standard parts from other manufacturers. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology.