
K4RAH165VB-BIWM
SAMSUNG

The STPNM80 MOSFET has a drain to source voltage rated at 800 V and an on-resistance of 1.05 ?. Furthermore, it is able to sustain a continuous current of 6.5 A. MDmeshTM technology incorporates the advantages of the multiple drain process into the well-known PowerMESHTM horizontal layout framework from STMicroelectronics. The end result is a product with low on-resistance, high dv/dt capability, and good avalanche properties.
100% avalanche tested
Very low input capacitance and gate charge
Vey low gate input resistance
6.5 A Drain continuous current
-55 to 150 °C automotive-grade operating temperature
Switching Applications
Converters
Lighting Control
Audio amplifiers
Power supplies
Telecom
No key features available
No application scenarios available
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Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
IMPORTANT NOTICE
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