STP8NM60D [STMicroelectronics]

STP8NM60D Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 380pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 8A.As a result of its turn-off delay time, which is 26 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 32A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).

STP8NM60D Features

the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 32A.

STP8NM60D Applications

There are a lot of STMicroelectronics
STP8NM60D applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.