Name: STR1P2UH7
Brand: STMicroelectronics
SKU: STR1P2UH7

STR1P2UH7 [STMicroelectronics]

Part No:

STR1P2UH7

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 100m ? @ 700mA, 4.5V ±8V 510pF @ 10V 4.8nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Operating Temperature

150°C TJ

Packaging

Cut Tape (CT)

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STR1

Power Dissipation-Max

350mW Tc

FET Type

P-Channel

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 10V

Current - Continuous Drain (Id) @ 25°C

1.4A Ta

Gate Charge (Qg) (Max) @ Vgs

4.8nC @ 4.5V

Drain to Source Voltage (Vdss)

20V

Drive Voltage (Max Rds On,Min Rds On)

1.8V 4.5V

Vgs (Max)

±8V

Continuous Drain Current (ID)

1.4A

RoHS Status

RoHS Compliant

Products Detail

STR1P2UH7 Description

STR1P2UH7 is a type of P-channel power MOSFET developed by STMicroelectronics using STripFET H7 technology and a trench gate structure. It is able to provide extremely low on-state resistance, low capacitance, and gate charge, as well as high avalanche ruggedness. Moreover, STR1P2UH7 also offers ultra-low capacitances for higher switching frequency operations.